Part Number Hot Search : 
B7643 C2532 100E1 EDZ13B PC339 MBRF3010 MAX48 IRLR2705
Product Description
Full Text Search
 

To Download RG4A Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 VISHAY
RG4A to RG4J
Vishay Semiconductors
Fast Sinterglass Diode
\
Features
* High temperature metallurgically bonded construction * Cavity-free glass passivated junction * Fast switching for high efficiency * 3.0 ampere operation at Tamb = 50 C with no thermal runaway * Hermetically sealed package
Mechanical Data
Case: Sintered glass case, G4 Terminals: Solder plated axial leads, solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 1040 mg
17133
Parts Table
Part RG4A RG4B RG4D RG4G RG4J VRRM = 50 V VRRM = 100 V VRRM = 200 V VRRM = 400 V VRRM = 600 V Type differentiation G4 G4 G4 G4 G4 Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics Maximum average forward rectified current Peak forward surge current Maximum average reverse current Operating junction and storage temperature range 0.375 " (9.5 mm) lead length at Tamb = 55 C 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) at rated peak reverse voltage Tamb = 25 C at rated peak reverse voltage Tamb = 100 C Part RG4A RG4B RG4D RG4J RG1J Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IF(AV) IFSM IR(AV) IR(AV) TJ, TSTG Value 50 100 200 400 600 3.0 100 2.0 100 - 55 to + 175 Unit V V V V V A A A A C
Document Number 86076 Rev. 2, 28-Jan-03
www.vishay.com 1
RG4A to RG4J
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified Parameter Typical thermal resistance 1)
1)
Symbol RJA
Value 22
Unit K/W
Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, with both leads attached to heat sink
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Maximum instantaneous forward voltage Maximum reverse current Maximum reverse recovery time IF = 3.0 A VR = VRRM IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical junction capacitance VR = 4.0 V, f = 1 MHz RG4A RG4B RG4D RG4G RG4J Test condition Part Symbol VF IR trr trr trr trr trr CJ 50 Typ. Max 1.3 5.0 150 150 150 150 250 Unit V A ns ns ns ns ns pF
Typical Characteristics (Tamb = 25 C unless otherwise specified)
Average Forward Rectified Current (A)
4.0 Resistive or Inductive Load 200 TA = 55C 8.3ms Single Half Sine-Wave (JEDEC Method) 100
3.0
2.0
1.0
0.375" (9.5mm) Lead Length 0 0 25 50 75 100 125 150 175
gRG4A_02
Peak Forward Surge Current (A)
10 1 10 100
gRG4A_01
Ambient Temperature (C)
Number of Cycles at 60 HZ
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com 2
Document Number 86076 Rev. 2, 28-Jan-03
VISHAY
RG4A to RG4J
Vishay Semiconductors
20
Instantaneous Forward Current (A)
10
1
TJ = 25C Pulse Width = 300s 1% Duty Cycle
0.1
0.01 0.4
gRG4A_03
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
Instantaneous Reverse Current (A)
TJ = 125C
1
TJ = 75C 0.1
TJ = 25C 0.01 0 20 40 60 80 100
gRG4A_04
Percent of Rated Peak Reverse Voltage (V)
Figure 4. Typical Reverse Characteristics
100 TJ = 25C f = 1.0 MHZ Vsig, 50mVp-p 50
Junction Capacitance (pF)
10 1
gRG4A_05
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
Document Number 86076 Rev. 2, 28-Jan-03
www.vishay.com 3
RG4A to RG4J
Vishay Semiconductors Package Dimensions in Inches (mm)
VISHAY
0.180 (4.6) 0.115 (2.9) DIA.
1.0 (25.4) MIN.
0.300 (7.6) MAX.
0.042 (1.07) 0.038 (0.962) DIA.
17032
1.0 (25.4) MIN.
www.vishay.com 4
Document Number 86076 Rev. 2, 28-Jan-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
RG4A to RG4J
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86076 Rev. 2, 28-Jan-03
www.vishay.com 5
This datasheet has been download from: www..com Datasheets for electronics components.


▲Up To Search▲   

 
Price & Availability of RG4A

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X